Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications
Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications
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用于宽带低损耗 RF 开关应用的超晶格城堡型场效应晶体管 (SLCFET) 的进展
DOI：
10.1109/mwsym.2016.7540023
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
H. G. Henry
中科院分区：
文献类型：
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作者：
R. Howell;E. Stewart;R. Freitag;J. Parke;B. Nechay;M. King;Shalini Gupta;M. Snook;I. Wathuthanthri;Parrish Ralston;H. G. Henry
超晶格型卡斯特场效应晶体管（SLCFET）使用通道区域的超晶格形成多个平行电流通路，并与蚀刻在该超晶格中的卡斯特相结合，以提供侧壁栅极结构。侧壁栅极允许栅极施加的电场穿透平行的2DEG层之间，允许载流子在材料内部雪崩击穿之前耗尽，就像传统栅极结构一样。使用AlGaN/GaN超晶格，我们报告了该方法作为缩放RF开关性能的方法，在不显着增加OFF电容的情况下降低on电阻，测量的中位数on电阻为0.38 Ω-mm，测量的中位数OFF电容为0.21 pF/mm，从而获得RF开关的优值FCO=2.0太赫兹。SLCFET的90/10和10/90下降和上升时间已被测量快于100 nsec，而系列SLCFET在10 GHz下的射频功率处理已被测量大于10 W而没有损耗压缩。在0.5-20 GHz带宽范围内实现了宽带SPDT射频开关性能，插入损耗<;|-0.3| dB，隔离度为>|-30| dB。
The Super-Lattice Castellated Field Effect Transistor (SLCFET) uses a super-lattice in the channel region to form multiple parallel current paths in conjunction with castellations etched into that super-lattice to provide a sidewall gate structure. The sidewall gate permits the gate applied electric field to penetrate between the parallel 2DEG layers, allowing the carriers to be depleted out prior to avalanche breakdown within the material, as would occur with a conventional gate structure. Using an AlGaN/GaN super-lattice, we report on this method as a way to scale RF switch performance, decreasing ON resistance without significantly increasing OFF capacitance, with a median measured ON resistance of 0.38 Ω-mm and a median measured OFF capacitance of 0.21 pF/mm, leading to an RF switch figure of merit, FCO=2.0 THz. 90/10 and 10/90 fall and rise times for the SLCFET have been measured to be faster than 100 nsec, while the RF power handling for a series SLCFET has been measured at 10 GHz to be greater than 10 W without loss compression. Wideband SPDT RF switch performance over a 0.5-20 GHz bandwidth with <;|-0.3| dB of insertion loss and >|-30| dB of isolation has been achieved.