A More Reliable and Sensitive Overcurrent Detection Method in DC Breaker Surge Current Applications via VGE as a Desaturation Precursor
A More Reliable and Sensitive Overcurrent Detection Method in DC Breaker Surge Current Applications via VGE as a Desaturation Precursor
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DOI：
10.1109/tpel.2023.3237771
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发表时间：
2023-04
影响因子：
6.7
通讯作者：
Jing-Fang Wang;Guishu Liang;Lei Qi;Xiangyu Zhang
中科院分区：
文献类型：
--
作者：
Jing-Fang Wang;Guishu Liang;Lei Qi;Xiangyu Zhang
去饱和一直是IGBT安全运行的最严重威胁之一。目前主流的直流断路器用IGBT驱动器主要采用通态电压VCEsat作为IGBT去饱和的监测参数。然而，这种检测方法需要器件首先进入高损耗去饱和区，这可能最终导致IGBT器件的热击穿。这封信揭示了一种新的现象（自浪涌电流模式），其中栅极电压VGE在IGBT去饱和之前上升。这封信提出了一种新的检测方法，使用VGE作为去饱和的前兆的基础上，全面分析这一现象。所提出的方法能够实现高度可靠和灵敏的检测，同时对IGBT器件的最大电流性能影响很小，防止IGBT器件进入极高损耗去饱和区。实验结果表明，与传统VCE检测相比，VGE检测可减少80%以上的检测时间，IGBT结温升高可减少75%以上。
Desaturation has always been one of the most severe threats to IGBT safety operations. The current mainstream IGBT drivers used in dc breakers primarily choose on-state voltage VCEsat as the monitor parameter of IGBT desaturation. However, this detection method requires the device first to enter the high-loss desaturation region, which may eventually lead to the thermal breakdown of the IGBT device. This letter reveals a new phenomenon (self-surge current mode) in which the gate voltage VGE rises prior to IGBT desaturation. This letter proposes a novel detection method that uses VGE as a desaturation precursor based on comprehensive analyses of this phenomenon. The proposed method enables highly reliable and sensitive detection while having little impact on the IGBT devices’ maximum current performance, preventing the IGBT device from entering the extremely high loss desaturation region. The experimental results in this letter show that compared to traditional VCE detection, proposed VGE detection can reduce detection time by more than 80% and IGBT junction temperature rise by more than 75%.