Bonding between Cu and α-Al2O3
Bonding between Cu and α-Al2O3
复制标题
Cu 与 α-Al2O3 之间的键合
DOI：
10.3139/146.020438
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
M. Rühle
中科院分区：
文献类型：
--
作者：
M. Gao;C. Scheu;T. Wagner;W. Kurtz;M. Rühle
摘要本研究旨在系统地研究表面处理方法对铜与α-Al_2O_3界面结合的影响。用高空间分辨电子能量损失谱和高分辨电子显微镜研究了分子束外延和扩散连接形成的α-Al_2O_3界面。结果表明，Al_2O_3表面的制备对界面结合有较大影响。对于经过化学清洗和热处理的Al_2O_3基片，只有很弱的铜与Al_2O_3之间的结合。Ar+离子预溅射的Al_2O_3薄膜具有更强的附着力。Al_2O_3基片上的样品在预溅射后在超高真空下退火后观察到类似金属间的界面结合，而在预溅射后在氧气中退火的Al_2O_3基片上的样品没有形成明显的界面结合。扩散连接生产中施加的高温和压力不是界面连接的决定因素。
Abstract This ongoing study aims to investigate systematically the influence of surface preparation methods on the bonding between Cu and α-Al2O3. High-spatial-resolution electron energy-loss spectroscopy and high-resolution transmission electron microscopy were used to study Cu/α-Al2O3 interfaces produced by molecular beam epitaxy and diffusion bonding. Our results show that the preparation of the Al2O3 surface can affect the interfacial bonding considerably. Only very weak adhesion between Cu and Al2O3 could be obtained for an Al2O3 substrate subjected to a chemical cleaning procedure followed by annealing. Ar+ ion pre-sputtering of the Al2O3 led to much stronger adhesion. Intermetallic-like interfacial bonding was observed in the samples on Al2O3 substrates annealed in ultra-high vacuum after pre-sputtering; whilst in the samples on Al2O3 substrates annealed in oxygen after the pre-sputtering, no significant bonding formed. High temperature and pressure applied in diffusion bonding production were not found to be determining factors for the interfacial bonding.