Thin-Film Electroluminescent Device Employing Ta2O5 RF Sputtered Insulating Film
Thin-Film Electroluminescent Device Employing Ta2O5 RF Sputtered Insulating Film
复制标题
采用Ta2O5射频溅射绝缘薄膜的薄膜电致发光器件
DOI：
10.1143/jjap.21.1028
复制
发表时间：
1982
期刊：
影响因子：
--
通讯作者：
K. Murase
中科院分区：
文献类型：
--
作者：
H. Kozawaguchi;B. Tsujiyama;K. Murase
为了制造低电压驱动的高亮度薄膜电致发光器件，器件的发射特性采用低介电损耗Ta2O5射频溅射绝缘膜已被研究，与那些器件采用Y2O3，Sm2O3和Al2O3沉积绝缘体进行比较。结果表明，采用Ta2O5，射频溅射薄膜的器件具有更高的亮度，更低的驱动电压和更高的稳定性比其他设备。此外，在Ta2O5绝缘器械中未观察到老化。这些结果表明，Ta2O5射频溅射膜是适合作为绝缘膜在薄膜电致发光器件，绝缘膜的性能密切相关的，在这样的设备中的发射特性。
In order to fabricate low-voltage-driven high-brightness thin-film electroluminescent devices, the emission characteristics of devices employing low dielectric loss Ta2O5 RF-sputtered insulating films have been studied in comparison with those of devices employing Y2O3, Sm2O3 and Al2O3 deposited insulators. It was found that the devices employing Ta2O5, RF-sputtered films exhibited higher brightness, lower driving voltage and higher stability than the other devices. In addition, no aging was observed in the Ta2O5 insulated devices. These results indicate that the Ta2O5 RF-sputtered film is suitable as the insulating film in thin-film electroluminescent devices, and that the properties of the insulating film are closely related to the emission characteristics in such devices.