Delayed-switch-on effect in metal-insulator-metal organic memories
Delayed-switch-on effect in metal-insulator-metal organic memories
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DOI：
10.1063/1.2794434
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发表时间：
2007-10
影响因子：
4
通讯作者：
Ming Wang;Jingmin Zhou;X. D. Gao;B. Ding;Z. Shi;Xin Sun;X. Ding;X. Hou
中科院分区：
文献类型：
--
作者：
Ming Wang;Jingmin Zhou;X. D. Gao;B. Ding;Z. Shi;Xin Sun;X. Ding;X. Hou
我们报告了有机记忆中的延迟开启效应;即，当以低于阈值电压的电压偏置时，有机存储器件可以在一定时间段之后自动地从关断状态切换到导通状态。同时，电压越低，开关时间越长。随着电压的降低，时间从毫秒到大约104秒。此外，通过施加阈值电压和Vmax之间的特定电压，也获得中间状态。在有机层中的导电微通道的存在被认为是负责所观察到的开关现象。
We report a delayed-switch-on effect in organic memories; i.e., the organic memory devices can automatically switch from off state to on state after a certain period of time when biased at voltages below the threshold voltage. Meanwhile, the lower the voltage is, the longer the switching time will be. The time scales from milliseconds to about 104s with decreasing voltage. Moreover, by applying a certain voltage between threshold voltage and Vmax, intermediate states are also obtained. The existence of filamentary microconducting channels in the organic layer is proposed to be responsible for the observed switching phenomenon.