A semi-empirical large-signal compact model for RF carbon nanotube field-effect transistors
A semi-empirical large-signal compact model for RF carbon nanotube field-effect transistors
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DOI：
10.1109/mwsym.2013.6697679
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
M. Schroter;M. Haferlach;P. Sakalas;M. Claus
中科院分区：
文献类型：
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作者：
M. Schroter;M. Haferlach;P. Sakalas;M. Claus
提出了一种新的紧凑型CNTFET大信号模型。该模型面向射频模拟电路设计的实际需求，克服了现有模型的精度和不连续性问题。由于很难获得Landauer方程以及管上注入和累积电荷的紧凑解析解，本文提出了漏电流和管电荷的半经验公式。整个模型可扩展为多管多指射频CNTFET结构，并包括金属管、接触电阻、寄生电容、自加热和磁滞的影响。基于脉冲直流和射频测量，对该模型进行了实验验证。
A new compact large-signal model for CNTFETs is presented. The model is oriented towards practical requirements for RF analog circuit design, thus overcoming accuracy and discontinuity issues of existing models. Due to the difficulties of obtaining a compact analytical solution for the Landauer equation as well as for the injected and accumulated charge on the tube, a semi-empirical formulation for the drain current and tube charge has been developed. The complete model is scalable towards multi-tube multi-finger RF CNTFET structures and includes the effects of metallic tubes, contact resistances, parasitic capacitances, self-heating and hysteresis. Experimental verification of the model is shown based on pulsed DC and RF measurements.