Real‐Time Observation and Control of Pentacene Film Growth on an Artificially Structured Substrate
Real‐Time Observation and Control of Pentacene Film Growth on an Artificially Structured Substrate
复制标题
DOI：
10.1002/adma.200901436
复制
发表时间：
2009-12
影响因子：
29.4
通讯作者：
Y. Tsuruma;A. Al‐Mahboob;S. Ikeda;J. Sadowski;Genki Yoshikawa;Y. Fujikawa;T. Sakurai;K. Saiki
中科院分区：
文献类型：
--
作者：
Y. Tsuruma;A. Al‐Mahboob;S. Ikeda;J. Sadowski;Genki Yoshikawa;Y. Fujikawa;T. Sakurai;K. Saiki
通过光电发射电子显微镜发现，在SiO2通道上生长并五苯期间，金电极周围的成核受到抑制。质量流由SiO2和金上的分子取向之间的差异驱动。沟道/电极边界处的不良连接性导致场效应晶体管的性能下降，发现通过在电极上进行自组装单层处理可以改善场效应晶体管的性能（参见图;单层厚度（ML））。
Suppression of nucleation around a gold electrode during pentacene growth on a SiO2 channel is found by photoemission electron microscopy. Mass flow is driven by the difference between the molecular orientations on SiO2 and gold. The poor connectivity at the channel/electrode boundary causes degradation in the performance of a field-effect transistor, which is found to be improved by self-assembled monolayer treatment on the electrode (see figure; thickness in monolayers (ML)).