Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt-GaN diodes
Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt-GaN diodes
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DOI：
10.1063/1.3496625
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发表时间：
2010-11-01
影响因子：
3.2
通讯作者：
Irokawa, Yoshihiro
中科院分区：
文献类型：
--
作者：
Irokawa, Yoshihiro
在室温下，将铂-SiO(2)-GaN二极管暴露在氢气中可以改变其导电机制，从Fowler-Nordheim隧穿转变为Pool-Frenkel发射。与在氮气中相比，铂-SiO(2)-GaN二极管在氢气中的电容-电压(C-V)曲线明显向负偏压方向移动。与之形成鲜明对比的是，Pt-Si(X)N(Y)-GaN二极管在氮气中表现出Pool-Frenkel发射，并且在氢气中没有表现出任何导电机制的变化。Pt-Si(X)N(Y)-GaN二极管的C-V曲线在氢气中也没有发生任何变化。这些结果表明肖特基金属中功函数的变化不是氢敏性的主要机制。金属和半导体之间的界面在氢与半导体器件(包括二极管和场效应晶体管(FET))的相互作用中起着关键作用。(C)2010年美国物理研究所。[DOI：10.1063/1.3496625]
Exposure of Pt-SiO(2)-GaN diodes to hydrogen at room temperature is found to change the conduction mechanisms from Fowler-Nordheim tunneling to Pool-Frenkel emission. The capacitance-voltage (C-V) curve for Pt-SiO(2)-GaN diodes in hydrogen significantly shifts toward negative bias values as compared with that in nitrogen. In sharp contrast, Pt-Si(x)N(y)-GaN diodes exhibit Pool-Frenkel emission in nitrogen and do not show any change in the conduction mechanism upon exposure to hydrogen. The C-V curve for Pt-Si(x)N(y)-GaN diodes also does not show any shifts upon the exposure to hydrogen. These results suggest that the work function change in the Schottky metal is not responsible mechanism for the hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devices, including diodes and field-effect transistors (FETs). (C) 2010 American Institute of Physics. [doi:10.1063/1.3496625]