A Sub-0.2°/hr Bias Drift Micromechanical Silicon Gyroscope With Automatic CMOS Mode-Matching
A Sub-0.2°/hr Bias Drift Micromechanical Silicon Gyroscope With Automatic CMOS Mode-Matching
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DOI:
10.1109/jssc.2009.2016996
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发表时间:
2009-05-01
影响因子:
5.4
通讯作者:
Ayazi, Farrokh
中科院分区:
文献类型:
--
作者:
Sharma, Ajit;Zaman, Mohammad Faisal;Ayazi, Farrokh
This paper describes a system architecture and CMOS implementation that leverages the inherently high mechanical quality factor (Q) of a MEMS gyroscope to improve performance. The proposed time domain scheme utilizes the often-ignored residual quadrature error in a gyroscope to achieve, and maintain, perfect mode-matching (i.e., similar to 0 Hz split between the high-Q drive and sense mode frequencies), as well as electronically control the sensor bandwidth. A CMOS IC and control algorithm have been interfaced with a 60 pm thick silicon mode-matched tuning fork gyroscope (M-2-TFG) to implement an angular rate sensing microsystem with a bias drift of 0.16 degrees/hr. The proposed technique allows microsystem reconfigurability-the sensor can be operated in a conventional low-pass mode for larger bandwidth, or in matched mode for low-noise. The maximum achieved sensor Q is 36,000 and the bandwidth of the microsensor can be varied between 1 to 10 Hz by electronic control of the mechanical frequencies. The maximum scale factor of the gyroscope is 88 mV/degrees/s. The 3 V IC is fabricated in a standard 0.6 mu m CMOS process and consumes 6 mW of power with a die area of 2.25 mm(2).