REAL TIME SPECTROELLIPSOMETRY FOR OPTIMIZATION OF DIAMOND FILM GROWTH BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FROM CO/H2 MIXTURES
REAL TIME SPECTROELLIPSOMETRY FOR OPTIMIZATION OF DIAMOND FILM GROWTH BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FROM CO/H2 MIXTURES
复制标题
通过微波等离子体增强 CO/H2 混合物化学气相沉积来优化金刚石薄膜生长的实时光谱椭圆分析法
DOI：
10.1063/1.363668
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发表时间：
1996
影响因子：
3.2
通讯作者：
R. Collins
中科院分区：
文献类型：
--
作者：
Joungchel Lee;B. Hong;R. Messier;R. Collins
实时光谱椭偏仪已用于确定非常薄（<1000埃）但完全聚结的纳米晶金刚石薄膜中非金刚石（sp2键合）碳体积分数的沉积速率和厚度演变，纳米晶金刚石薄膜是通过微波等离子体增强化学气相沉积从CO和H2气体混合物中制备在Si基板上的。在~800°C的基底温度下，可以获得两个数量级的高质量金刚石薄膜，CO/H2气体流量比从探索的最低值0.04到~5。当 CO/H2 比率为 0.2 时，观察到 sp2 C 体积分数的明确定义最小值（600 A 薄膜中为 0.03），对应于 C-H-O 金刚石生长相图坐标 XH/Σ=[H]/{[H]+[C]} 为 0.9。在这些条件下，在活化能为 8 kcal/mol 的范围内，沉积速率随着温度的升高而增加，活化能为 8 kcal/mol，与 CH4/H2 比率为 0.01 时观察到的金刚石薄膜生长行为相同。这一观察结果表明，占主导地位的...
Real time spectroellipsometry has been applied to determine the deposition rate and thickness evolution of the nondiamond (sp2‐bonded) carbon volume fraction in very thin (<1000 A), but fully coalesced, nanocrystalline diamond films prepared on Si substrates by microwave plasma‐enhanced chemical vapor deposition from gas mixtures of CO and H2. At a substrate temperature of ∼800 °C, high quality diamond films can be obtained over two orders of magnitude in the CO/H2 gas flow ratio, from 0.04, the lowest value explored, to ∼5. A well‐defined minimum in the sp2 C volume fraction (0.03 in a 600 A film) is observed for a CO/H2 ratio of 0.2, corresponding to the C–H–O diamond‐growth phase‐diagram coordinate XH/Σ=[H]/{[H]+[C]} of 0.9. Under these conditions, the deposition rate increases with increasing temperature over the range of ∼400–800 °C with an activation energy of 8 kcal/mol, behavior identical to that observed for diamond film growth from a CH4/H2 ratio of 0.01. This observation shows that the dominant...