Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources
Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources
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使用高功率源在毫米波下对电介质和半导体进行复介电常数测量
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
I. Tkachov
中科院分区：
文献类型：
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作者：
M. Afsar;K. Korolev;L. Subramanian;I. Tkachov
我们提供各种半导体和介电材料（包括高吸收物质）在 Q、V 和 W 频段频率的复杂介电常数测量。测量是使用宽带准光毫米波系统和后向波振荡器作为高功率辐射源完成的。根据透射谱计算介电常数实部和虚部的频率依赖性。使用波导桥技术和自由空间测量获得的复杂介电常数数据已与之前发布的结果进行了比较。
We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.