New physical insights and models for high-voltage LDMOST IC CAD
New physical insights and models for high-voltage LDMOST IC CAD
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DOI：
10.1109/16.85161
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发表时间：
1991-07
影响因子：
3.1
通讯作者：
Y. Kim;J. Fossum;R. K. Williams
中科院分区：
文献类型：
--
作者：
Y. Kim;J. Fossum;R. K. Williams
横向DMOST（LDMOST），包括一个轻掺杂漏极（LDD）和固有的双极结型晶体管（BJT），广泛研究使用二维器件模拟器PISCES。PISCES模拟提供了对LDMOST的正常和反向模式操作的物理见解，这些操作用于开发用于电路模拟的全面LDD LDMOST模型。在建模方法中，LDD LDMOST区域划分为三个主要组成部分（沟道，漂移区和BJT），并在每个组件中的载流子输运问题得到解决。该复合物理模型在高压集成电路（HVIC）CAD的SPICE中实现，并得到了测量的支持。建模方法也适用于Resurf LDMOST。>
The lateral DMOST (LDMOST), including an LDD (lightly doped drain) and the inherent BJT (bipolar junction transistor), is studied extensively using the two-dimensional device simulator PISCES. The PISCES simulations provide physical insights into the normal- and reverse-mode operations of the LDMOST, which are used for developing a comprehensive LDD LDMOST model for circuit simulation. In the modeling methodology, the LDD LDMOST is regionally partitioned into three main components (the channel, the drift region, and the BJT), and carrier-transport problems in each component are solved. The composite physical model is implemented in SPICE for HVIC (high-voltage integrated circuit) CAD and is supported by measurements. The modeling methodology is also applicable to the Resurf LDMOST. >