Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps
Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps
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DOI：
10.1016/j.mee.2005.01.003
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发表时间：
2005-03-01
影响因子：
2.3
通讯作者：
Horn, MW
中科院分区：
文献类型：
--
作者：
Anderson, ME;Srinivasan, C;Horn, MW
我们应用自组装在通过光刻技术形成的金结构上形成多层膜，以创建具有10 - 100 nm范围内的间距的图案。控制这些多层膜的位置和厚度形成"分子标尺"抗蚀剂，以精确地调整光刻限定结构之间的间距。我们报告了通过结合光刻和分子尺来设计和图案化复杂纳米结构的最新结果。在光致抗蚀剂和分子抗蚀剂的曝光、显影、金属沉积和剥离之后，最终产品具有选择性取向的二级结构和间隙以产生分层纳米结构。使用该工艺形成的纳米间隙的电完整性针对各种多层厚度和电极宽度进行评估。(c)2005年由Elsevier B.V.出版
We apply self-assembly to form multilayers on gold structures formed by lithographic techniques to create patterns with spacings in the 10-100 nm regime. Controlled placement and thickness of these multilayers form "molecular ruler" resists to tailor spacings accurately between lithographically defined structures. We report on recent results both in designing and patterning complex nanostructures by combining photolithography and molecular rulers. After exposure, development, metal deposition, and lift-off of both the photoresist and molecular resist, the final product has secondary structures and gaps selectively oriented to create hierarchical nanostructures. The electrical integrity of the nanogaps formed using this process is evaluated for a variety of multilayer thicknesses and electrodes widths. (c) 2005 Published by Elsevier B.V.