ELECTRONIC TRANSPORT IN SEMIMETALLIC CERIUM SULFIDE
ELECTRONIC TRANSPORT IN SEMIMETALLIC CERIUM SULFIDE
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DOI：
10.1103/physrev.133.a1143
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发表时间：
1964-01-01
期刊：
影响因子：
--
通讯作者：
FITZPATRICK, RL
中科院分区：
文献类型：
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作者：
CUTLER, M;LEAVY, JF;FITZPATRICK, RL
电阻率ρ和塞贝克系数S在10 - 1000 K之间在Ce 3− xS 4中测量，x值从0到0.30。其电学行为是半金属性的，在很大程度上可以用传统输运理论的S（T）和ρ（T）方程来拟合。然而，空位的静电效应的检查表明，它们引入了大的有效电荷，这是很差的屏蔽。因此，晶体中的电位波动很大，这使人们对理论方程的字面解释产生了怀疑;目前，它们必须被认为是对实验结果的经验描述。存在相对大的剩余电阻率，这表明在具有小的x值的样品中每个空位具有非常大的横截面。这可以通过异常大的筛选距离来解释。在低于100 K的温度范围内，在具有小空位浓度的样品中观察到S（T）和ρ（T）的异常。S（T）的反常似乎是由声子拖曳引起的。电阻率异常的原因尚不清楚，我们认为它们是由本地晶格振动或自旋散射的铈离子的4 f壳层的电子所造成的可能性。
The electrical resistivity ρ and Seebeck coefficient S have been measured between 10 and 1000 K in Ce 3− x S 4 with values of x ranging from 0 to 0.30. The electrical behavior is semimetallic and can be fitted, in large measure, to the equations of conventional transport theory for S (T) and ρ (T). However, examination of the electrostatic effects of the vacancies shows that they introduce large effective charges which are poorly screened. Consequently, there are wide fluctuations in potential in the crystal which cast doubt on a literal interpretation of the theoretical equations; at present, they must be regarded as providing a largely empirical description of the experimental results. There is a relatively large residual resistivity which indicates a very large cross section per vacancy in samples with small values of x. This can be accounted for by the abnormally large screening distance. In the temperature range below 100 K, anomalies are observed in S (T) and ρ (T) in samples with small vacancy concentrations. Anomalies in S (T) seem to be caused by phonon drag. The cause of the resistivity anomalies is not yet clear; we consider the possibilities that they are caused by local lattice vibrations or by spin scattering by electrons in the 4 f shell of the cerium ions.