Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
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DOI：
10.1143/apex.3.031002
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Kamata, Norihiko
中科院分区：
文献类型：
--
作者：
Hirayama, Hideki;Tsukada, Yusuke;Kamata, Norihiko
通过引入多量子垒电子阻挡层（EBL），在AlN/蓝宝石模板上制备了高效率的250-262 nm深紫外（DUV）AlGaN多量子阱（MQW）发光二极管（LED）。对于250 nm AlGaN LED，通过用MQB-EBL代替通常的“单势垒”EBL，观察到效率的显著提高，高达2.7倍。在室温（RT）cw操作下测量的具有MQB-EBL的LED的最大外量子效率和输出功率对于250 nm和262 nm LED分别为1.18%和4.8 mW以及1.54%和10.4 mW，这是有史以来报道的最高值。(C)2010日本应用物理学会
We demonstrated high-efficiency 250-262 nm deep-ultraviolet (DUV) AlGaN multi-quantum well (MQW) light-emitting diodes (LEDs) fabricated on AlN/sapphire templates by introducing multiquantum-barrier (MQB) electron-blocking layers (EBLs). A marked enhancement in efficiency, by as much as 2.7 times, was observed for a 250 nm AlGaN LED by replacing the usual "single-barrier'' EBL with a MQB-EBL. The maximum external quantum efficiencies and output powers of LEDs with MQB-EBLs measured under room temperature (RT) cw operation were 1.18% and 4.8 mW, and 1.54% and 10.4 mW, for the 250 nm and 262 nm LEDs, respectively, which are the highest values ever reported. (C) 2010 The Japan Society of Applied Physics