Effect of top Ru deposition pressure on magnetic and microstructural properties of CoCrPt-SiO2 media in two-step Ru layer
Effect of top Ru deposition pressure on magnetic and microstructural properties of CoCrPt-SiO2 media in two-step Ru layer
复制标题
顶部Ru沉积压力对两步Ru层CoCrPt-SiO2介质磁性和微观结构性能的影响
DOI：
10.1063/1.2162815
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
D. Hong
中科院分区：
文献类型：
--
作者：
Soon;S.O. Kim;T. Lee;Hyoung;Yoon;N. Park;D. Hong
两步沉积的20 nm的Ru层已被用作CoCrPt-SiO2垂直磁记录介质的底层。为了hcp（0002）的良好织构，在3 mTorr下沉积10 nm的底部Ru层，并且在各种条件下沉积10 nm的顶部Ru层。溅射功率和Ar压力是顶部Ru层沉积的变量。随着顶部Ru层的溅射压力的增加，CoCrPt-SiO2层的矫顽力（Hc）增加，然后随着溅射压力的进一步增加而饱和或略微降低。Hc的增加主要是由于CoCrPt颗粒之间的交换退耦。当溅射压力高于3 mTorr时，通过两步沉积方法的Ru层的c轴取向与单步沉积的Ru层的c轴取向相比得到了很大的改善。当溅射气压较高时，Ru层晶粒尺寸较小，晶粒间被空洞边界分隔。小茹颗粒之间有一一对应的关系……
Two-step-deposited Ru layers of 20 nm have been employed as an underlayer for CoCrPt–SiO2 perpendicular magnetic recording media. The bottom Ru layer of 10 nm is deposited at 3 mTorr for good texture of hcp (0002) and the top Ru layer of 10 nm is deposited at various conditions. Sputtering power and Ar pressure are variables for the top Ru layer deposition. As the sputtering pressure of the top Ru layer increases, coercivity (Hc) of the CoCrPt–SiO2 layer increases and then saturates or slightly decreases with a further increase of sputter pressure. The Hc increase is mainly due to exchange decoupling among grains of CoCrPt. The c-axis alignment of the Ru layer by the two-step deposition method is much improved compared to that of a single-step-deposited Ru layer when the sputtering pressure is higher than 3 mTorr. The grain size of Ru layer is smaller and the grains are well separated by void boundaries when the top Ru sputtering pressure is high. There is a one-to-one relationship between small Ru grains...