Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
复制标题
极化电子源应变GaAs层光电阴极中电子的自旋弛豫
DOI：
10.1143/jjap.34.6444
复制
发表时间：
1995
影响因子：
1.5
通讯作者：
T. Kato
中科院分区：
文献类型：
--
作者：
H. Horinaka;Daisaku Ono;Wendong Zhen;K. Wada;Yoshio Cho;Y. Hayashi;T. Nakanishi;S. Okumi;H. Aoyagi;T. Saka;T. Kato
The luminescence polarization method using a mode-locked Ti:sapphire laser and a streak camera is applied to the measurement of the spin relaxation time and the lifetime of electrons in the strained-GaAs-layer photocathode of a polarized electron source. The spin relaxation time and the electron lifetime are 105 ps and 45 ps at room temperature, respectively. Electron-hole scattering is thought to be the main mechanism of the spin relaxation of our strained-GaAs photocathode.
