A low power Transimpedance Amplifier using inductive feedback approach in 90nm CMOS
A low power Transimpedance Amplifier using inductive feedback approach in 90nm CMOS
复制标题
在 90nm CMOS 中使用电感反馈方法的低功耗跨阻放大器
DOI：
10.1109/iscas.2009.5118168
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
G. Cowan
中科院分区：
文献类型：
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作者：
Omidreza Ghasemi;R. Raut;G. Cowan
提出了一种用于跨阻放大器带宽扩展的感应反馈方法。采用这种方法减小了MOS晶体管寄生电容的影响。阐述了零极点对消以扩展放大器带宽的过程。为了验证该技术的可行性，采用著名的CMOS工艺(即90 nm STMicroElectronics)对一种新的跨阻放大器进行了模拟。在有150fF光电二极管电容和5fF负载电容的情况下，实现了大于16 GHz的3分贝带宽，而功耗仅为2.2 mW。尽管功耗很低，但该功放仍显示出卓越的噪声性能。
An inductive feedback approach for BW extension of Transimpedance Amplifiers has been proposed. The effect of parasitic capacitances of the MOS transistor has been reduced using this approach. The process of zero-pole cancellation to extend the BW of the amplifier has been explained. To demonstrate the feasibility of the technique a new transimpedance amplifier has been simulated in a well-known CMOS technology (i.e. 90nm STMicroelectronics). It achieves a 3-dB bandwidth of more than 16GHz in the presence of a 150fF photodiode capacitance and 5fF loading capacitance while only dissipating 2.2mW. Despite this low power dissipation, the amplifier shows superior noise performance.