Rapid growth of ADP crystal in a defined crystallographic direction
Rapid growth of ADP crystal in a defined crystallographic direction
复制标题
DOI：
10.1039/c7ce02076g
复制
发表时间：
2018-02
期刊：
影响因子：
3.1
通讯作者：
Yafei Lian;Mingxia Xu;Lisong Zhang;Dongting Cai;Tingting Sui;Xun Sun;X. Chai
中科院分区：
文献类型：
--
作者：
Yafei Lian;Mingxia Xu;Lisong Zhang;Dongting Cai;Tingting Sui;Xun Sun;X. Chai
采用温度还原“点种子”快速生长法，在水溶液中沿一定方向（θ = 90°，Φ = 45°）生长磷酸二氢铵（NH4H2PO4， ADP）晶体。讨论了沿Z方向生长的ADP晶体与沿特定方向生长的ADP晶体的异同。采用线性透射光谱、拉曼光谱、光热显微镜和激光诱导损伤等方法描述了晶体的性质。结果表明，该方法不仅可以提高ADP晶体金字塔区的质量，还可以提高晶体的利用率。
Ammonium dihydrogen phosphate (NH4H2PO4, ADP) crystals were grown in a defined direction (θ = 90°, Φ = 45°) from an aqueous solution via the temperature reduction “point-seed” rapid growth method. The similarities and differences between ADP crystals grown in the Z direction and in a defined direction were discussed. Linear transmittance spectroscopy, Raman spectroscopy, photo-thermal microscopy and laser-induced damage were implemented to describe the properties of the crystals. The results show that this method can improve the quality of the pyramid sector of ADP crystals and can also increase the utilization ratio of the crystals.