Electrical conductivity of LnVO3 compounds
Electrical conductivity of LnVO3 compounds
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LnVO3化合物的电导率
DOI：
10.1016/0025-5408(76)90034-9
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发表时间：
1976
影响因子：
5.4
通讯作者：
T. Shin
中科院分区：
文献类型：
--
作者：
T. Sakai;G. Adachi;J. Shiokawa;T. Shin
制备了稀土钒酸盐LnVO3(Ln=La-Lu和Y)。这些化合物具有空间群 Pbnm 的钙钛矿型结构。每种 LnVO3 的电导率均在低于室温的真空中进行了研究。结果表明，所有稀土钒矿都是外在的 p 型半导体，其活化能约为 0.1 eV。电阻率沿镧系元素系列从 LaVO3 到 GdVO3 增加，并在 TbVO3 和 LuVO3 之间观察到准恒定值。这些结果根据古迪纳夫的局域电子模型进行了讨论。
Rare-earth vanadites LnVO3(Ln = La-Lu and Y) were prepared. These compounds have a perovskite-type structure with space group Pbnm. Electrical conductivity of each LnVO3has been studied in vacuum below room temperature. Results show that all rare-earth vanadites are extrinsic, p-type semiconductors having an activation energy of about 0.1 eV. Resistivity increases along the lanthanide series from LaVO3to GdVO3with quasi-constant values observed between TbVO3and LuVO3. These results are discussed in terms of Goodenough's localized electron model.