Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
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DOI：
10.1063/1.4975634
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发表时间：
2017-01
期刊：
影响因子：
1.6
通讯作者：
Wojciech Rudno‐Rudziński;M. Syperek;J. Andrzejewski;A. Maryński;J. Misiewicz;A. Somers;S. Höfling;J. Reithmaier;G. Sȩk
中科院分区：
文献类型：
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作者：
Wojciech Rudno‐Rudziński;M. Syperek;J. Andrzejewski;A. Maryński;J. Misiewicz;A. Somers;S. Höfling;J. Reithmaier;G. Sȩk
我们研究了混合二维零维 (2D-0D) 隧道结构的光学特性，其中包含强伸长的 InAs/InP(001) 量子点（称为量子破折号），发射波长为 1.55 μm。这些量子破折号 (QDashes) 由 2.3 nm 宽的势垒与 InGaAs 量子阱 (QW) 隔开，晶格与 InP 匹配。我们通过改变 QW 厚度定制了 QDash 和 QW 中限制的状态之间的量子力学耦合。通过结合调制光谱和光致发光激发，我们确定了系统中所有相关光学跃迁的能量，并证明了载流子从 QW 到 QDash 的转移，这是隧道注入方案的基本要求。通过时间分辨光致发光探测了混合系统基态中电子和空穴限制的 0D 和混合型 2D-0D 特征之间的转变，揭示了 PL 衰减时间随 QW 宽度变化的显着变化。这 ...
We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are separated by a 2.3 nm-width barrier from an InGaAs quantum well (QW), lattice matched to InP. We have tailored quantum-mechanical coupling between the states confined in QDashes and a QW by changing the QW thickness. By combining modulation spectroscopy and photoluminescence excitation, we have determined the energies of all relevant optical transitions in the system and proven the carrier transfer from the QW to the QDashes, which is the fundamental requirement for the tunnel injection scheme. A transformation between 0D and mixed-type 2D-0D character of an electron and a hole confinement in the ground state of the hybrid system have been probed by time-resolved photoluminescence that revealed considerable changes in PL decay time with the QW width changes. The ...