Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions
Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions
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DOI：
10.1149/1.3595741
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发表时间：
2011-08
影响因子：
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通讯作者：
Kyeong-Ho Lee;K. Nomura;H. Yanagi;T. Kamiya;H. Hosono
中科院分区：
文献类型：
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作者：
Kyeong-Ho Lee;K. Nomura;H. Yanagi;T. Kamiya;H. Hosono
研究了非晶In-Ga-Zn-O（a-IGZO）/p型Si异质结的光伏特性和电子结构。在300 ℃真空退火条件下，获得了转换效率为5.3%的优化太阳电池.短路电流为28.1 mA·cm − 2，接近没有电子背反射器的理论极限。开路电压（Voc）为0.31 V，受0.39 V的内置电位限制。该结果结合硬X射线光电子能谱提供了a-IGZO的电子亲和力和电离势，表明低Voc是由a-IGZO的深导带底部控制的。
The photovoltaic properties and electronic structures of amorphous In-Ga-Zn-O (a-IGZO)/p-type Si heterojunctions were investigated. An optimized solar cell with a conversion efficiency of 5.3% was obtained by vacuum annealing at 300 C. The short circuit current was 28.1 mA· cm− 2, which approaches the theoretical limit without an electron back reflector. The open circuit voltage (V oc) was 0.31 V, which was limited by the built-in potential of 0.39 V. This result combined with hard x-ray photoemission spectroscopy provided the electron affinity and ionization potential of a-IGZO, indicating the low V OC was controlled by the deep conduction band bottom of a-IGZO.