Relationship between Carrier Density and Precursor Solution Stirring for Lead-Free Tin Halide Perovskite Solar Cells Performance
Relationship between Carrier Density and Precursor Solution Stirring for Lead-Free Tin Halide Perovskite Solar Cells Performance
复制标题
DOI：
10.1021/acsaem.1c03622
复制
发表时间：
2022-04-01
影响因子：
6.4
通讯作者：
Hayase, Shuzi
中科院分区：
文献类型：
--
作者：
Baranwal, Ajay Kumar;Nishimura, Kohei;Hayase, Shuzi
用溶剂二甲亚砜（DMSO）氧化卤化锡钙钛矿前体（THP）有一些有趣的缺点。我们发现添加 GeI2 可以阻碍渐进搅拌下的 THP 氧化。随后，前驱体溶液的搅拌时间会影响所制备薄膜的载流子密度和半导体性能，因为DMSO可以增加氧化诱导的载流子密度。另一方面，二甲基甲酰胺(DMF)可以抑制氧化引起的载流子密度。 24小时后，使用DMF时效率为10.26%，使用DMSO作为搅拌溶剂时效率为7.12%。
The oxidation of tin halide perovskite precursor (THP) with the solvent dimethyl sulfoxide (DMSO) has intriguing drawbacks. We found that THP oxidation under progressive stirring can be hindered by the addition of GeI2. Subsequently, the stirring time of the precursor solution affects the carrier density and semiconducting properties of fabricated films, because DMSO can increase the oxidation induced carrier density. On the other hand, dimethylformamide (DMF) can suppress the oxidation induced carrier density. After 24 h, an efficiency of 10.26% is found when DMF is used and 7.12% is found when DMSO is used as a stirring solvent.