Sub-mA threshold current quick fabrication VCSELs for characterisation of epitaxial material over 150mm wafers
Sub-mA threshold current quick fabrication VCSELs for characterisation of epitaxial material over 150mm wafers
复制标题
亚毫安阈值电流快速制造 VCSEL，用于表征 150mm 晶圆上的外延材料
DOI：
10.1117/12.2610179
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Baker J
中科院分区：
文献类型：
--
作者：
Baker J
VCSELs的简化制造工艺采用氧化通孔来定义激光孔径和键合垫，应用于150mm晶圆上作为材料表征技术。这种快速制造工艺生产出具有代表性的vcsel，其性能与标准工艺vcsel相当，对于8μm氧化物孔径器件，两种器件类型的阈值电流均在0.8至1.3mA之间。利用激光波长的红移和阈值电流对VCSEL晶圆进行了快速评价。
A simplified fabrication process for VCSELs which employs oxidation-vias for definition of the laser aperture and bond pad is applied to a full 150mm wafer as a technique for material characterisation. This Quick Fabrication process produces representative VCSELs, with performance comparable to standard process VCSELs, with threshold currents for 8μm oxide-aperture devices measured between 0.8 and 1.3mA for both device types. The redshift of the lasing wavelength and threshold currents are used for rapid assessment of the VCSEL wafers.