Initial Stage of Amorphous Si and Si0.7Ge0.3 Deposition on SiO2 by Low-Pressure Chemical Vapor Deposition
Initial Stage of Amorphous Si and Si0.7Ge0.3 Deposition on SiO2 by Low-Pressure Chemical Vapor Deposition
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低压化学气相沉积法在 SiO2 上沉积非晶 Si 和 Si0.7Ge0.3 的初始阶段
DOI：
10.1149/1.1470658
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发表时间：
2002
影响因子：
3.9
通讯作者：
S. Min
中科院分区：
文献类型：
--
作者：
T. Yoon;D. H. Lee;Ki;S. Min
研究了在375～450℃温度范围内低压化学气相沉积在SiO 2 上非晶Si和Si 0.7 Ge 0.3 沉积的初始阶段。标称厚度为约5nm的非晶Si和Si 0.7 Ge 0.3 层均未形成连续层。相反，这些层是通过岛屿的形成而增长的。结果还表明，在相似的标称膜厚下，非晶Si和Si 0.7 Ge 0.3 薄膜的表面粗糙度随着温度的降低而增加。基于薄膜的成核和生长行为、成核热力学驱动力和吸附原子附着机制，解释了非晶Si和Si 0.7 Ge 0.3 薄膜岛的形成以及表面粗糙度对沉积温度的依赖性。
The initial stage of amorphous Si and Si 0.7 Ge 0.3 deposition on SiO 2 by low-pressure chemical vapor deposition was investigated in the temperature range from 375 to 450°C. Both amorphous Si and Si 0.7 Ge 0.3 layers with a nominal thickness of about 5 nm did not form a continuous layer. Rather, the layers grew by island formation. The results also show that the surface roughness of amorphous Si and Si 0.7 Ge 0.3 films increases with decreasing temperature at a similar nominal film thickness. The formation of islands and the dependence of the surface roughness of amorphous Si and Si 0.7 Ge 0.3 films on deposition temperature are explained on the basis of the nucleation and growth behavior of thin films with respect to the thermodynamic driving force of nucleation and the mechanism of adatom attachment.