Magnetoresistance in (Co10 Å/Cu10 Å)n multilayer films as n increases
Magnetoresistance in (Co10 Å/Cu10 Å)n multilayer films as n increases
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(Co10 Å/Cu10 Å)n 多层薄膜中随着 n 增加的磁阻
DOI：
10.1063/1.352656
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发表时间：
1993
影响因子：
3.2
通讯作者：
T. Mcguire
中科院分区：
文献类型：
--
作者：
T. Plaskett;T. Mcguire
Cu_（10）A/（Co_（10）A/Cu_（10）A）_n多层膜的磁电阻率（MR%）随n的增加呈非线性增加。对于每一个n值，电阻率随外加电场而减小。当n≤16时，4.2 K下的MR值小于2%，但当n=128时，MR值增加到38%。传导电子平均自由程（l），从膜电阻率作为总膜厚度的函数计算，增加从l=150到470 A时，施加的磁场从零到18 kOe的变化。l的值表明，当n≤16时，表面散射降低了MR，而当n≥16时，表面散射不太重要，Co原子矩有序是最重要的因素。大约一半的电阻率随磁场的下降与最终的2%的磁化强度增加5千奥斯特以上的领域，我们解释在钴界面无序。
Multilayers of Cu10 A/(Co10 A/Cu10 A)n, where n is the number of bilayers, shows a nonlinear increase of magnetoresistance ratio (MR%) with increasing n. For each value of n the resistivity decreases with applied field. MR values at 4.2 K are less than 2% for n≤16 but increase to 38% at n=128. Conduction electron mean free paths (l), calculated from film resistivity as a function of total film thickness, increase from l=150 to 470 A when the applied magnetic field changes from zero to 18 kOe. The values obtained for l indicate that for n≤16 MR is reduced by diffuse surface scattering while for n≥16 MR surface scattering is less important and the Co atomic moment ordering is the most important factor. About half the decrease in resistivity with field is associated with the final 2% increase in magnetization for fields above 5 kOe which we interpret in terms of Co interface disorder.