Time-resolved study of intervalence band thermalization in a GaAs quantum well
Time-resolved study of intervalence band thermalization in a GaAs quantum well
复制标题
GaAs 量子阱中间隔带热化的时间分辨研究
DOI：
10.1063/1.116367
复制
发表时间：
1996
影响因子：
4
通讯作者：
K. Köhler
中科院分区：
文献类型：
--
作者：
A. Kim;S. Hunsche;T. Dekorsy;H. Kurz;K. Köhler
利用飞秒双色泵浦探测技术研究了GaAs量子阱中光激发冷空穴的热化过程。由于LO声子吸收，发现了从重空穴散射到最低轻空穴带的明确证据。我们得到坚定的数据散射时间强烈依赖于晶格温度。它们从室温的230 fs变化到T=105 K时的900 fs。数值计算结果与实验数据吻合较好。
The thermalization of optically excited cold holes in a GaAs quantum well is investigated by femtosecond two‐color pump–probe measurements. Clear evidence is found for scattering from heavy‐holes into the lowest light‐hole band due to LO‐phonon absorption. We obtain firm data on scattering times which depend strongly on lattice temperature. They vary from 230 fs at room temperature to 900 fs at T=105 K. The experimental data are well reproduced by numerical calculations.