Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate
Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate
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基于 InP 衬底上的 Ga1−xInxAs/GaAs1−ySby II 型超晶格的发光二极管和激光二极管
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
J. Wagner
中科院分区：
文献类型：
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作者：
M. Peter;R. Kiefer;F. Fuchs;N. Herres;K. Winkler;K. Bachem;J. Wagner
我们报告的发光二极管（LED）和激光二极管的制造和表征与交错的II型Ga 1-xInxAs/GaAs 1-ySby超晶格（SL）作为有源区。采用金属有机化学气相沉积法在InP衬底上生长了应变补偿的SL。LED在室温下的电致发光波长可达2.14 μm，折射率引导二极管激光器在300 K下的电致发光波长可达1.71 μm。发现自发发射光谱随着注入电流密度的增加而显示出显著的蓝移，导致二极管激光器的激光发射波长比LED的短。
We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1−xInxAs/GaAs1−ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 μm, the index-guided diode lasers displayed cw laser emission at 1.71 μm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED.