Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system
Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system
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DOI：
10.1109/iedm.1989.74284
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发表时间：
1989-12
期刊：
影响因子：
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通讯作者：
T. Shinohe;A. Nakagawa;Y. Minami;M. Atsuta;Y. Kamei;H. Ohashi
中科院分区：
文献类型：
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作者：
T. Shinohe;A. Nakagawa;Y. Minami;M. Atsuta;Y. Kamei;H. Ohashi
提出了一种具有高 di/dt 开通特性的新型 MOS 辅助栅极触发晶闸管 (MAGT)。结果表明，在 1500V 阳极电压、9090A/cm/sup 2/ 峰值阳极电流和 0.7μs 脉冲宽度下开启时，可以获得 40 kA/cm/sup 2// mu s 的 di/dt，并且开启功率损耗极低。即使在阳极电流密度为 9090 A/cm/sup 2/ 的情况下，由高 di/dt 引起的瞬态阳极电压也小于 100 V。结论是，MAGT 是一种非常有前途的器件，可在高重复准分子激光系统中替代闸流管。>
A novel MOS assisted gate-triggered thyristor (MAGT) having high di/dt turn-on characteristics is proposed. It is shown that 40 kA/cm/sup 2// mu s of di/dt can be attained for a turn-on from 1500-V anode voltage, 9090-A/cm/sup 2/ peak anode current, and 0.7- mu s pulse width, with an extremely low turn-on power loss. The transient anode voltage, caused by high di/dt, is less than 100 V, even in the case of 9090 A/cm/sup 2/ for the anode current density. It is concluded that MAGT is a very promising device to replace thyratrons in a high-repetition excimer laser system.>