A.G.Bhuiyan: "Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy"Applied Physics Letters. 82. 4788-4790 (2003)
A.G.Bhuiyan: "Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy"Applied Physics Letters. 82. 4788-4790 (2003)
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A.G.Bhuiyan：“使用不同技术生长的吸收边在 0.7 至 2 eV 之间的单晶 InN 薄膜以及实际带隙能量的证据”《应用物理快报》。
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