Si grating structure for surface plasmon resonance excitation by back-side normal incidence illumination
Si grating structure for surface plasmon resonance excitation by back-side normal incidence illumination
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DOI：
10.35848/1882-0786/abe084
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发表时间：
2021-02
影响因子：
2.3
通讯作者：
Y. Saito;Shinichi Suzuki;T. Kan
中科院分区：
文献类型：
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作者：
Y. Saito;Shinichi Suzuki;T. Kan
我们提出了一种适合于表面等离子体共振（SPR）激发的结构，其具有与半导体工艺的亲和性。我们在绝缘体上硅晶片的顶层上构建了衍射光栅，并将光栅完全嵌入聚合物中。根据反射率测量，SPR可以被有效地激发，其行为与计算结果一致。由于这种结构是基于半导体制造的，并且允许消除SPR实验中常用的棱镜和光接收器，因此它将有助于实现薄的单芯片SPR器件。
We propose a structure suitable for surface plasmon resonance (SPR) excitation with light incident on the back-side of the device, which has affinity with the semiconductor process. We constructed a diffraction grating on the top layer of a silicon-on-insulator wafer and completely embedded the grating in a polymer. According to a reflectance measurement, SPR could be efficiently excited, and its behavior presented consistency with the calculations. Since this structure is semiconductor fabrication based and allows elimination of both the prism and the light receiver commonly used in SPR experiments, it will contribute to realization of a thin one-chip SPR device.