Enhancement of coercive field in atomically-thin quenched Fe5GeTe2
Enhancement of coercive field in atomically-thin quenched Fe5GeTe2
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DOI：
10.35848/1882-0786/ab7f18
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发表时间：
2020-03
影响因子：
2.3
通讯作者：
T. Ohta;K. Sakai;H. Taniguchi;Benjamin Driesen;Y. Okada;K. Kobayashi;Y. Niimi
中科院分区：
文献类型：
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作者：
T. Ohta;K. Sakai;H. Taniguchi;Benjamin Driesen;Y. Okada;K. Kobayashi;Y. Niimi
我们已经制备了一个货车范德华（vdW）铁磁金属Fe 5GeTe 2的薄膜，并通过测量它们的异常霍尔效应。虽然体相Fe5GeTe2不像Fe3GeTe2那样表现出垂直磁各向异性（PMA），但PMA出现在薄膜器件中。此外，PMA的增强与Fe5GeTe2的厚度减小。特别是，在1050 K下淬火的Fe5GeTe2薄膜（5个晶胞层）器件的矫顽场比未淬火的器件的矫顽场大两倍。这样的PMA应该是有用的，为未来的vdW自旋电子器件。
We have fabricated thin films of a van der Waals (vdW) ferromagnetic metal Fe5GeTe2 and characterized them by measuring the anomalous Hall effect. While the bulk Fe5GeTe2 does not exhibit a perpendicular magnetic anisotropy (PMA) unlike Fe3GeTe2, PMA emerges in the thin film devices. Furthermore, the PMA is enhanced with decreasing thickness of Fe5GeTe2. In particular, a thin film (5 unit-cell layer) device fabricated with Fe5GeTe2 quenched at 1050 K has two times larger coercive field than that prepared without quenching. Such a PMA should be useful for future vdW spintronic devices.