Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material
Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material
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绝缘体上硅材料覆盖层中 74Ge 离子注入形成的赝晶 SiGe 的光致发光
DOI：
10.1063/1.121536
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发表时间：
1998
影响因子：
4
通讯作者：
M. Willander
中科院分区：
文献类型：
--
作者：
C. Patel;Q. X. Zhao;O. Nur;M. Willander
采用高剂量74Ge+离子注入绝缘体上硅的方法实现了亚稳态的SiGe-on-绝缘体结构，并进行了固相外延再生长。用光致发光(PL)光谱研究了峰值浓度为18%的Ge离子注入层和注入后退火层的光学性质。从伪MOSFET表征技术定性地推断了应变层的电完整性。发光结果表明，注入后的热处理可以完全消除与Ge注入损伤相关的宽带(BB)发射。经500 °C热处理的样品的PL谱和测量的跨导表明，已经形成了无缺陷的应变SiGe层。然而，高温热处理样品的电荷载流子寿命下降，出现了峰值能量为0.816 eV的新的BB发射，并在0.870 eVf出现了与缺陷相关的发射。
A metastable SiGe-on-insulator structure is realized by a high-dose 74Ge+ ion implantation in the overlayer of silicon-on-insulator followed by solid phase epitaxial regrowth. Studies of the optical properties of the germanium-implanted and post-implantation annealed layers with 18% peak germanium concentration were carried out using photoluminescence (PL) spectroscopy. The electrical integrity of the strained layer was qualitatively inferred from the pseudo-mosfet characterization technique. The PL results show that the broadband (BB) emission related to germanium implantation damage can be completely eliminated by post-implantation thermal treatment. PL spectra and measured transconductance of the sample heat-treated at 500 °C indicate conclusively that a defect-free strained SiGe layer has been formed. However, samples heat-treated at higher temperatures show degradation in the charge carrier lifetime, a new BB emission with 0.816 eV peak energy and an emergence of defect related emission at 0.870 eV f...