InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
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DOI：
10.1143/jjap.44.l45
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发表时间：
2004
影响因子：
1.5
通讯作者：
M. Kudo;T. Nakaoka;S. Iwamoto;Y. Arakawa
中科院分区：
文献类型：
--
作者：
M. Kudo;T. Nakaoka;S. Iwamoto;Y. Arakawa
InAsSb 量子点通过两种方法在 GaAs 衬底上生长。一种是通过传统的分子束外延生长的，其中砷和锑同时受到照射。另一种是通过用锑照射先前生长的 InAs 点来生长的，以防止锑熔剂充当表面活性剂。虽然通过常规方法生长的点的光致发光光谱具有两个峰，但是通过第二种方法生长的点的光致发光光谱具有单峰。在通过第二种方法生长的InAsSb量子点的光致发光光谱中观察到波长大于1.4μm的峰。
InAsSb quantum dots were grown on GaAs substrates by two methods. One was grown by conventional molecular-beam epitaxy in which arsenic and antimony were irradiated simultaneously. The other was grown by irradiating previously grown InAs dots with antimony to prevent antimony flux from functioning as a surfactant. Although the photoluminescence spectrum of the dots grown by the conventional method had two peaks, the photoluminescence spectrum of the dots grown by the second method had a single peak. Peaks at wavelengths longer than 1.4 µm were observed in the photoluminescence spectrum of the InAsSb quantum dots grown by the second method.