Resistive switching properties of high crystallinity and low-resistance Pr0.7Ca0.3MnO3 thin film with point-contacted Ag electrodes
Resistive switching properties of high crystallinity and low-resistance Pr0.7Ca0.3MnO3 thin film with point-contacted Ag electrodes
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DOI：
10.1063/1.2816124
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发表时间：
2007-11-26
影响因子：
4
通讯作者：
Suzuki, Toshimasa
中科院分区：
文献类型：
--
作者：
Fujimoto, Masayuki;Koyama, Hiroshi;Suzuki, Toshimasa
在600℃条件下溅射制备的高结晶度、低电阻的Pr0.7Ca0.3MnO3（PCMO）薄膜没有Pt/Pr0.7Ca0.3MnO3/Pt结构的电阻开关，但具有显著的Ag浆料/Pr0.7Ca0.3MnO3/Pt结构的双极电阻开关。24h后，低阻状态的保留疲劳几乎饱和，其电阻开关特性表现为Ag晶粒与PCMO薄膜的点接触。研究还发现，该界面可形成界面陷阱态和电阻变化有源层。这强烈表明Ag点接触的功能与先前提出的丝路径和纳米畴开关的功能相似。(C) 2007年美国物理研究所。
A high-crystallinity, low-resistance Pr0.7Ca0.3MnO3(PCMO) thin film deposited by sputtering at 600 degrees C showed no resistive switching with a Pt/Pr0.7Ca0.3MnO3/Pt structure but a remarkable bipolar resistive switching with a Ag paste/Pr0.7Ca0.3MnO3/Pt structure. Observed retention fatigue of the low-resistance state was almost saturated after 24 h. The resistive switching properties were characterized as point contact of Ag grains to PCMO thin film. It was also found that the interface can form interfacial trap states and resistive change active layers. This strongly suggests that the function of the Ag point contact is similar to those of the previously proposed filament path and the nanodomain switch. (C) 2007 American Institute of Physics.