Antiferroelectric-like properties in MgO-modified 0.775Na0.5Bi0.5TiO3-0.225BaSnO3 ceramics for high power energy storage

Antiferroelectric-like properties in MgO-modified 0.775Na0.5Bi0.5TiO3-0.225BaSnO3 ceramics for high power energy storage
复制标题

用于高功率储能的 MgO 改性 0.775Na0.5Bi0.5TiO3-0.225BaSnO3 陶瓷的反铁电特性

DOI:
10.1016/j.jeurceramsoc.2018.08.010
复制
发表时间:
2018-12
影响因子:
5.7
通讯作者:
Gang Liu
Gang Liu
中科院分区:
材料科学1区
文献类型:
--
作者:
Lei Zhang;Yongping Pu;Min Chen;Gang Liu

文献摘要

参考文献

被引文献

相似文献

采用固态法制备了具有反铁电性质的0.775NBT-0.225BSN-x wt%MgO陶瓷。在晶粒较细的晶界周围发现了MgO的第二相,EDS图和XRD结果证实了这一点。掺mgo样品的弥漫性相变取代了x= 0样品的频散。在MgO改性陶瓷中首次观察到反铁电性质。用i - curves证明了类反铁电/铁电跃迁的演化。随着MgO浓度的增加,BDS和ef - eb逐渐升高。添加适量的氧化镁可以减小漏电流。当掺杂量为5 wt时。%,在215 kV/cm的电场下,放电能量密度达到了2.13 J/cm3。详细的分析可以在研究中找到。
Antiferroelectric-like 0.775NBT-0.225BSN-x wt%MgO ceramics have been prepared by solid state methods. The second phase of MgO was found in grain boundary surroundings with fine grains, which has been confirmed by EDS mapping and XRD results. Frequency dispersion ofx= 0 sample was replaced by diffuse phase transition of MgO-doped samples. Antiferroelectric-like properties were firstly observed in MgO modified ceramics. The evolution of antiferroelectric-like /ferroelectric transitions was demonstrated byI-Ecurves. With increasing MgO concentration, the BDS and EF-EBgradually increase. The leakage current can be reduced by suitable amount of MgO addition. When the doping content is 5 wt.%, the maximum discharge energy density of 2.13 J/cm3at an electric field of 215 kV/cm was achieved. Detailed analysis can be found in the study.
DOI: 10.1063/1.4747212
发表时间: 2012-08
影响因子: 4
作者:
Shanming Ke;Haitao Huang;H. Fan;H. Lee;Limin Zhou;Y. Mai
通讯作者: Shanming Ke;Haitao Huang;H. Fan;H. Lee;Limin Zhou;Y. Mai
用于储能的无铅 BNT-BT-NBN 钙钛矿陶瓷的介电行为和阻抗谱
DOI: 10.1016/j.ceramint.2016.03.062
发表时间: 2016
影响因子: 5.2
作者:
Xu Qi;Lanagan Michael T.;Huang Xuechen;Xie Juan;Zhang Lin;Hao Hua;Liu Hanxing
通讯作者: Liu Hanxing
DOI: 10.1039/c4ta04282d
发表时间: 2014-10
影响因子: --
作者:
Xiaofeng Su;Brian C. Riggs;M. Tomozawa;J. Nelson;D. Chrisey
通讯作者: Xiaofeng Su;Brian C. Riggs;M. Tomozawa;J. Nelson;D. Chrisey
DOI: 10.1063/1.124394
发表时间: 1999-07-19
影响因子: 4
作者:
Tan, Q;Li, JX;Viehland, D
通讯作者: Viehland, D
DOI: 10.1016/j.jeurceramsoc.2017.11.053
发表时间: 2017-11
影响因子: 5.7
作者:
Lei Zhang;X. Pu;Min Chen;Shuaishuai Bai;Y. Pu
通讯作者: Lei Zhang;X. Pu;Min Chen;Shuaishuai Bai;Y. Pu