Photochemical Modification of Silicone Films Using F2 Laser for Selective Chemical Etching
Photochemical Modification of Silicone Films Using F2 Laser for Selective Chemical Etching
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使用 F2 激光选择性化学蚀刻对有机硅薄膜进行光化学改性
DOI：
10.1143/jjap.43.3438
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发表时间：
2004
影响因子：
1.5
通讯作者：
T. Yamashita
中科院分区：
文献类型：
--
作者：
M. Okoshi;Takeshi Kimura;H. Takao;N. Inoue;T. Yamashita
用157 nm F2激光对有机硅（[SiO（CH 3）2]n）薄膜进行光化学改性，得到SiO2。有机硅的Si-CH_3键的解离仅依赖于F_2激光的光子数。量子产率估计约为1×10-2。阐明了改性膜的氧化和OH生成机理。改性的深度不受有机硅吸收系数的限制，因为改性膜的SiO2对F2激光是透明的。通过将改性样品浸入0.2wt%的氟化氢溶液中，可以制备1.5 μ m厚的有机硅膜的精细图案。
Silicone ([SiO(CH3)2]n) films were photochemically modified into SiO2 by irradiation with a 157 nm F2 laser. The dissociation of Si–CH3 bonds of silicone simply depended on the photon number of the F2 laser. The quantum yield of the modification was estimated to be approximately 1×10-2. Mechanisms of oxidation and O–H production in the modified films were clarified. The depth of the modification was not limited by the absorption coefficient of silicone because SiO2 of the modified films is transparent for the F2 laser. A fine pattern of the 1.5-µm-thick silicone films could be fabricated by immersing the modified samples in 0.2 wt% hydrogen fluoride solution.