New method to selectively determine hydrogen sulfide concentrations using CuO layers
New method to selectively determine hydrogen sulfide concentrations using CuO layers
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DOI：
10.1016/j.snb.2015.08.071
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发表时间：
2016-01-01
影响因子：
8.4
通讯作者：
Palzer, Stefan
中科院分区：
文献类型：
--
作者：
Kneer, Janosch;Knobelspies, Stefan;Palzer, Stefan
本文提出了一种利用多晶p型半导体氧化铜(CuO)选择性测定硫化氢(H_2S)浓度的新方法。与通常使用气敏金属氧化层的电阻率来测量痕量气体浓度的方法不同，我们表明可以利用硫化氢诱导的渗流相变的效应来实现这一目的。使用热调制协议，可以反转相变对层的电性能的影响，从而恢复层的初始状态。这形成了使用半导体金属氧化层的新型气体检测方法的基础。为了突出选择性方面的能力，对新方法对几种相关的氧化和还原气体进行了评估，包括二氧化氮(NO2)、二氧化硫(SO2)、氨(NH3)和硫化氢。传感器响应是在不同的工作温度和湿度水平下确定的。由于对H_2S的独特反应，新方法能够高度选择性地测定H_2S浓度。(C)2015爱思唯尔B.V.保留所有权利。
Within this paper we demonstrate a new method to selectively determine the hydrogen sulfide (H2S) concentration using polycrystalline p-type semiconducting copper(II)oxide (CuO). Unlike commonly pursued approaches that use the resistivity of gas sensitive metal oxide layers to measure a trace gas concentration we show that the effects of a H2S induced percolation phase transition may be utilized to that end. Using a thermal modulation protocol the effects of the phase transition on the electrical behaviour of the layer may be reversed thus restoring the initial state of the layer. This forms the basis for a novel gas detection method using a semiconducting metal oxide layer. To highlight the capabilities in terms of selectivity the novel approach has been evaluated for several relevant oxidizing and reducing gases, including nitrogen dioxide (NO2), sulfur dioxide (SO2), ammonia (NH3) and H2S. The sensor response is determined at different operating temperatures and humidity levels. Due to the unique reaction towards H2S the new method enables a highly selective determination of the H2S concentration. (C) 2015 Elsevier B.V. All rights reserved.