Layer exchange synthesis of multilayer graphene
Layer exchange synthesis of multilayer graphene
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DOI：
10.1088/1361-6528/ac1d05
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发表时间：
2021-08
期刊：
影响因子：
3.5
通讯作者：
K. Toko;H. Murata
中科院分区：
文献类型：
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作者：
K. Toko;H. Murata
在任意衬底上低温合成多层石墨烯（MLG）是将基于MLG的功能薄膜（包括先进电子设备中的透明电极、低电阻布线、散热器和电池阳极）并入MLG的关键。本文综述了利用碳和金属之间的层交换（LE）现象合成MLG的机理和器件应用的可能性。LE的机理与使用金属的常规MLG沉淀方法完全不同，并且所得MLG表现出独特的特征。金属物质和生长条件的调节使得能够在宽的生长温度（350 °C-1000 °C）和MLG厚度（5-500 nm）范围内合成高质量MLG。基于MLG的高电导率（2700 S cm−1）和锂离子电池中的阳极操作，讨论了器件应用。最后，我们讨论了未来的挑战，LE MLG和它的应用灵活的设备。
Low-temperature synthesis of multilayer graphene (MLG) on arbitrary substrates is the key to incorporating MLG-based functional thin films, including transparent electrodes, low-resistance wiring, heat spreaders, and battery anodes in advanced electronic devices. This paper reviews the synthesis of MLG via the layer exchange (LE) phenomenon between carbon and metal from its mechanism to the possibility of device applications. The mechanism of LE is completely different from that of conventional MLG precipitation methods using metals, and the resulting MLG exhibits unique features. Modulation of metal species and growth conditions enables synthesis of high-quality MLG over a wide range of growth temperatures (350 °C–1000 °C) and MLG thicknesses (5–500 nm). Device applications are discussed based on the high electrical conductivity (2700 S cm−1) of MLG and anode operation in Li-ion batteries. Finally, we discuss the future challenges of LE for MLG and its application to flexible devices.