Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces
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DOI：
10.1103/physrevmaterials.3.084606
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发表时间：
2019-08-26
影响因子：
3.4
通讯作者：
Palmstrom, Chris J.
中科院分区：
文献类型：
--
作者：
Lee, Joon Sue;Choi, Sukgeun;Palmstrom, Chris J.
我们报道了选择区域化学束外延生长InAs平面一维（1D）通道，使用图案化的SiO2涂层InP（001），InP（111）B，和InP（011）衬底，以建立一个可扩展的拓扑超导网络的平台。顶视图扫描电子显微照片显示出良好的表面选择性和依赖性的主要小平面上的衬底取向和脊方向，和主要小平面的表面能的比率进行了估计。详细的结构特性和缺陷的InAs纳米线（NW）的特征在于通过透射电子显微镜分析的横截面垂直于NW脊方向和沿着NW脊方向。使用霍尔棒、场效应迁移率器件、量子点和Aharonov-Bohm环器件研究了InAs纳米线的电输运性质，这些性质反映了选择性生长的InAs系统中存在的强自旋轨道相互作用和相位相干输运特性。这项研究表明，选择性区域化学束外延是一种可扩展的方法来实现具有优异的表面选择性的半导体1D沟道网络，这种材料系统是适合于量子输运研究。
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.