Field induced optical effects in coupled quantum wells
Field induced optical effects in coupled quantum wells
复制标题
耦合量子阱中的场致光学效应
DOI：
10.1109/3.81380
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发表时间：
1991
影响因子：
2.5
通讯作者：
K. Tada
中科院分区：
文献类型：
--
作者：
Y. Chan;K. Tada
本文用吸收电流谱方法对GaAs-AlAs量子威尔斯阱通过薄AlAs隔离层耦合的电光效应进行了理论和实验研究。已经发现，这种耦合量子阱结构表现出不同于孤立量子威尔斯的独特吸收特征，并且通过涉及电子和空穴的量子阱结构的场致去耦效应，吸收系数的大的变化是可能的。讨论了耦合量子阱结构在强度调制器中的应用。>
The electro-optical effects of GaAs-AlAs quantum wells coupled via a thin AlAs separating layer are studied theoretically and experimentally by absorption current spectroscopy. It has been found that such coupled quantum well structures exhibit unique absorption features that are different from isolated quantum wells, and large changes of the absorption coefficient are possible through the field induced decoupling effect involving both quantum well structures for electrons and holes. Application of the coupled quantum well structures in intensity modulators is also discussed. >