Metal-Organic Chemical Vapor Deposition of Aluminum Scandium Nitride
Metal-Organic Chemical Vapor Deposition of Aluminum Scandium Nitride
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DOI：
10.1002/pssr.201900535
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发表时间：
2019-11-07
影响因子：
2.8
通讯作者：
Ambacher, Oliver
中科院分区：
文献类型：
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作者：
Leone, Stefano;Ligl, Jana;Ambacher, Oliver
钪与AlN的合金表现出增强的压电系数，这可以提高氮化物基电子和光电器件（例如高电子迁移率晶体管（HEMT））的性能。因此，人们对高质量AlScN/GaN异质结构的外延生长越来越感兴趣。到目前为止，只有最近的报道，AlScN HEMT结构生长的分子束外延（MBE）已公布。在此，通过金属有机化学气相沉积（MOCVD）沉积AlScN外延层的动机，以及与这种方法相关联的挑战进行了解释。首次报道了Sc含量高达30%（Al_（0.7）Sc_（0.3）N）的外延层的成功沉积。结果表明，沉积的薄膜由具有高结晶质量的纤锌矿型AlScN组成，表明MOCVD适合于生长具有Sc基三元氮化物的HEMT结构。
Alloys of scandium with AlN exhibit an enhanced piezoelectric coefficient that can boost the performance of nitride-based electronic and optoelectronic devices such as high electron mobility transistors (HEMTs). Consequently, there is increasing interest in the epitaxial growth of high-quality AlScN/GaN heterostructures. So far, only very recent reports on AlScN HEMT structures grown by molecular beam epitaxy (MBE) have been published. Herein, the motivation for depositing AlScN epitaxial layers by metal-organic chemical vapor deposition (MOCVD) as well as the challenges associated with this approach are explained. For the first time, the successful deposition of epitaxial layers with a Sc content up to 30% (Al0.7Sc0.3N) is reported. It is shown that the deposited films consist of wurtzite-type AlScN with high crystalline quality, demonstrating that MOCVD is suitable for the growth of HEMT structures with Sc-based ternary nitrides.