Electronic band structure of AlB2 studied by angle-resolved photoemission spectroscopy
Electronic band structure of AlB2 studied by angle-resolved photoemission spectroscopy
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DOI：
10.1016/j.elspec.2005.01.126
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发表时间：
2005-06-01
影响因子：
1.9
通讯作者：
Aoki, H
中科院分区：
文献类型：
--
作者：
Souma, S;Sato, T;Aoki, H
我们进行了紫外和X射线角分辨光电子能谱（ARPES）的AlB 2，这是一个非超导参考的MgB 2。我们发现AlB_2的or-band被完全占据，而MgB_2的a-band被部分占据，这表明费米能级上的sigma-band是超导性的关键。我们还发现了一个电子口袋中心的伽玛（A）点在UVARPES光谱中的MgB 2，而它是不存在的X射线ARPES光谱。这表明电子袋是表面起源的。(c)2005 Elsevier B. V.保留所有权利。
We have performed UV and X-ray angle-resolved photoemission spectroscopy (ARPES) on AlB2 which is a non-superconducting reference of MgB2. We found that the or-band is totally occupied in AlB2 in contrast to the partially occupied a-band in MgB2, which suggests that the sigma-band on the Fermi level is essential for the superconductivity. We also found an electron pocket centered at the Gamma(A) point in the UVARPES spectrum as in MgB2, while it is absent in the X-ray ARPES spectra. This indicates that the electron pocket is of surface origin. (c) 2005 Elsevier B.V. All rights reserved.