Thermoelectric properties of amorphous zinc oxide thin films fabricated by pulsed laser deposition
Thermoelectric properties of amorphous zinc oxide thin films fabricated by pulsed laser deposition
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DOI：
10.2320/matertrans.46.1470
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发表时间：
2005-07-01
影响因子：
1.2
通讯作者：
Morimoto, J
中科院分区：
文献类型：
--
作者：
Inoue, Y;Okamoto, M;Morimoto, J
采用脉冲激光沉积法在室温下制备了非掺杂非晶氧化锌（ZnO）薄膜，研究了该薄膜在室温至673 K温度范围内的热电性能。X射线衍射、透射光谱和电子显微镜观察结果表明，沉积态薄膜和热处理态薄膜均为无定形结构，其中ZnO呈无规六方网络结构，热处理态薄膜中含有ZnO晶粒。在643 K时，Seebeck系数a的绝对值最大，为135 μ V/K，电阻率p为1.01 × 10（-4）Ω m，功率因数P为1.79 × 10（-4）W/mK（2），与（ZnO）（5）In_2 O_3和（Zn_（1 - 1）Al_x）O等ZnO化合物的值基本相同。p和a的热处理依赖性表明源于非晶的自由电子减少并向非晶的准稳定相转变。结果表明，非晶结构的变程跳跃导电与a-ZnO薄膜的热电性能有关。
Thermoelectric properties of non-doped amorphous zinc oxide (ZnO) thin film were studied at between room temperature and around 673 K, where the samples were prepared by pulsed laser deposition at room temperature. The results of X-ray diffraction, transmittance spectroscopy and electron microscope observation indicate that both as-deposited film and heat treated film had amorphous structure with random hexagonal network of ZnO, where the latter included crystallized ZnO grains. The highest absolute value of Seebeck coefficient a was 135 mu V/K at 643 K, where the electrical resistivity p was 1.01 X 10(-4) Omega m and the power factor P was 1.79 x 10(-4) W/mK(2), and the a was almost the same as those of other ZnO compounds such as (ZnO)(5)In2O3 and (Zn1-1Alx)O. The heat treatment dependence of the p and the a indicated the decrease of free electrons originated in amorphous and the transition to the quasi-stable phase of amorphous. It was suggested that the amorphous structure with variable range hopping conduction relates to the thermoelectric properties of a-ZnO thin film.