Phase transition and microstructure change in Ta–Zr alloy films by co-sputtering
Phase transition and microstructure change in Ta–Zr alloy films by co-sputtering
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DOI：
10.1016/j.surfcoat.2004.10.019
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发表时间：
2005-08
影响因子：
5.4
通讯作者：
Z. Tang;J. Hsieh;Shanyong Zhang;Chuan Li;Y. Fu
中科院分区：
文献类型：
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作者：
Z. Tang;J. Hsieh;Shanyong Zhang;Chuan Li;Y. Fu
采用共溅射方法在Si(100)衬底上制备了成分范围较宽的Ta-Zr薄膜。沉积过程中施加了0~80W的射频偏置功率。用X射线衍射仪、扫描电子显微镜、X射线光电子能谱和四探针法对薄膜进行了表征。结果表明，掺入的Zr形成了低阻的体心立方相Ta，从而使Ta-Zr薄膜的电阻率降低。随着衬底偏压的增加，形成非晶态结构的成分范围缩小。讨论了热力学和动力学对Ta-Zr非晶化倾向的影响。
Ta–Zr Thin films with wide range of compositions were deposited on Si (100) substrate by co-sputtering. RF bias power from 0 to 80 W was applied during deposition. Films were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and four-point probe. Result showed the incorporation of Zr caused the formation of low-resistivity BCC Ta, which made the resistivity of Ta–Zr films decrease. With substrate bias increasing, the compositional range for forming amorphous structure shrank. The effects of both thermodynamics and kinetics on Ta–Zr amorphization tendency were discussed.