Nonvolatile memory with multilevel switching: A basic model
Nonvolatile memory with multilevel switching: A basic model
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DOI：
10.1103/physrevlett.92.178302
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发表时间：
2004-04-30
影响因子：
8.6
通讯作者：
Sánchez, MJ
中科院分区：
文献类型：
--
作者：
Rozenberg, MJ;Inoue, IH;Sánchez, MJ
目前，非易失性双端电阻随机存取存储器（RRAM）的研究正在兴起，以满足下一代电子应用的需要。RRAM由具有两个金属电极的半导体的简单夹层组成。我们在这里介绍一个初始模型的RRAM的假设，半导体部分有一个noncrystalating域结构。我们通过数值模拟的方法对模型进行了求解，详细揭示了载流子传输的基本机制。我们的模型捕捉到了实验中观察到的三个关键特征：电阻的多级可切换性，其记忆保持性和电流-电压曲线中的滞后行为。
There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.