Effect ofTiN-ZrO2 intermediate layer on the microstructure and magnetic properties ofFePt and FePt-SiO2-C thin films

Effect ofTiN-ZrO2 intermediate layer on the microstructure and magnetic properties ofFePt and FePt-SiO2-C thin films
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TiN-ZrO2中间层对FePt和FePt-SiO2-C薄膜微观结构和磁性能的影响

DOI:
10.1016/j.jmmm.2017.02.016
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发表时间:
2017
影响因子:
2.7
通讯作者:
Song Junlei
Song Junlei
中科院分区:
材料科学3区
文献类型:
--
作者:
Dong Kaifeng;Jin Fang;Mo Wenqin;Song Junlei

文献摘要

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系统地研究了在TiN-ZrO2和TiN-ZrO2/TiN中间层上生长的FePT基薄膜的微结构和磁性能。TiN-ZrO2中间层为颗粒状,由非晶态ZrO2偏析的Ti(Zr)固溶体颗粒组成。结果表明,在TiN中间层中掺杂ZrO2后,FePt-SiO_2-C薄膜的晶粒度显著减小。同时,分离度明显提高,粒度分布更加均匀。而在TiN-ZrO2中间层上生长的FePt-SiO_2-C薄膜,由于TiN-ZrO_2中间层中的非晶态ZrO_2干扰了FePT的外延生长,导致薄膜的磁性能缓慢恶化。为了提高TiN-ZrO2(0,0,2)织构和结晶度,引入了TiN-ZrO2/TiN复合中间层。在改善磁性能的同时,实现了细化晶粒度的效益。对于在TiN/TiN-ZrO230%复合中间层上生长的FePt4 nm-SiO240%-C20%的FePt4 nm-SiO240%-C20%复合中间层,获得了具有良好隔离的FePT(0,0:1)颗粒膜,其矫顽力大于17.6 kOe,平均尺寸为6.5 nm。
The microstructures and magnetic properties of FePt based thin films grown on TiN-ZrO2and TiN-ZrO2/TiN intermediate layers were systematically investigated. The TiN-ZrO2intermediate layer was granular consisting of grains of solid solution of Ti(Zr)ON segregated by amorphous ZrO2. It was found with doping ZrO2into TiN intermediate layer, grain size of FePt-SiO2-C films significantly decreased. Simultaneously, the isolation was obviously improved and grain size distribution became more uniform. However, the magnetic properties of the FePt-SiO2-C films grown on TiN-ZrO2intermediate layers were slowly deteriorated, which was due to the disturbance of the epitaxial growth of FePt by amorphous ZrO2in TiN-ZrO2intermediate layer. In order to improve the TiN-ZrO2(0 0 2) texture and the crystallinity of TiN-ZrO2, TiN-ZrO2/TiN combined intermediate layer was introduced. And the magnetic properties were improved, simultaneously, achieving the benefit of grain size reduction. For the FePt 4 nm-SiO240 vol%-C 20 vol% film grown on TiN/TiN-ZrO230 vol% combined intermediate layer, well isolated FePt (0 0 1) granular films with coercivity higher than 17.6 kOe and an average size as small as 6.5 nm were achieved.