Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth
Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth
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DOI：
10.1109/ted.2018.2875534
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发表时间：
2018-10
影响因子：
3.1
通讯作者：
S. Kotzea;A. Debald;M. Heuken;H. Kalisch;A. Vescan
中科院分区：
文献类型：
--
作者：
S. Kotzea;A. Debald;M. Heuken;H. Kalisch;A. Vescan
垂直GaN功率器件的关键挑战之一是其复杂的制造工艺。我们提出了第一个实验实现的GaN基垂直沟道结型场效应晶体管。选择性区域再生长工艺被开发用于外延形成用于沟道中的电流控制的横向p-n结。制造的第一个器件显示出${R}_{\mathrm{ON}}=\textsf {2.36}\，\，\text {m}\Omega \text {cm}^{{2}}$并演示了基本的电流调制。我们讨论了设备的特点和局限性。基于TCAD模型拟合的实验数据，我们探索未来的设备实现的设计规则。
One of the key challenges for vertical GaN power devices is their complex fabrication process. We present the first experimental realization of a GaN-based vertical-channel junction field-effect transistor. A selective-area regrowth process was developed to epitaxially form the lateral p-n junction used for current control in the channel. First devices fabricated show an ${R}_{\mathrm{ON}}=\textsf {2.36}\,\,\text {m}\Omega \text {cm}^{{2}}$ and demonstrate basic current modulation. We discuss the device characteristics and limitations. Based on a TCAD model fitted to the experimental data, we explore the design rules for future device implementation.