Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
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DOI：
10.1007/s11425-008-0039-6
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发表时间：
2008-08
期刊：
影响因子：
--
通讯作者：
L. Hsiao;Q. Ju;Shu Wang
中科院分区：
文献类型：
--
作者：
L. Hsiao;Q. Ju;Shu Wang
The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.
