Beyond Extreme Ultra Violet (BEUV) Radiation from Spherically symmetrical High-Z plasmas
Beyond Extreme Ultra Violet (BEUV) Radiation from Spherically symmetrical High-Z plasmas
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来自球对称高 Z 等离子体的超强紫外线 (BEUV) 辐射
DOI:
10.1088/1742-6596/688/1/012046
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发表时间:
2016
期刊:
影响因子:
--
通讯作者:
Hirosh
中科院分区:
文献类型:
--
作者:
Kensuke Yoshida;Shinsuke Fujioka;Takeshi Higashiguchi;Teruyuki Ugomori;Nozomi Tanaka;Masato Kawasaki;Yuhei Suzuki;Chihiro Suzuki;Kentaro Tomita;Ryouichi Hirose;Takeo Ejima;Hayato Ohashi;Masaharu Nishikino;Enda Scally;Hiroaki Nshimura;Hirosh
Photo-lithography is a key technology for volume manufacture of high performance and compact semiconductor devices. Smaller and more complex structures can be fabricated by using shorter wavelength light in the photolithography. One of the most critical issues in development of the next generation photo-lithography is to increase energy conversion efficiency (CE) from laser to shorter wavelength light. Experimental database of beyond extreme ultraviolet (BEUV) radiation was obtained by using spherically symmetrical high-Z plasmas generated with spherically allocated laser beams. Absolute energy and spectra of BEUV light emitted from Tb, Gd, and Mo plasmas were measured with a absolutely calibrated BEUV calorimeter and a transmission grating spectrometer. 1.0 x 10 12 W/cm 2 is the optimal laser intensity to produced efficient BEUV light source plasmas with Tb and Gd targets. Maximum CE is achieved at 0.8% that is two times higher than the published CEs obtained with planar targets.